SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device for obtaining a low-ON resistance without resulting in reduction of voltage resistance, and also to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor region of a plurality of second conductivity types selectively provided on the principal surface; a second semiconductor region of a plurality of the first conductivity types provided adjacent to the first semiconductor region and in contact with the principal surface of the semiconductor layer with the bottom connected between the adjacent first semiconductor regions; and a third semiconductor region of a second conductivity type provided on the bottom of the second semiconductor region adjacent thereto. The semiconductor device is also characterized in that the first semiconductor region, second semiconductor region, and the third semiconductor region are arranged repeatedly almost in the parallel direction for the principal surface of the semiconductor layer. COPYRIGHT: (C)2008,JPO&INPIT