SEGMENT PILLAR LAYOUT FOR HIGH-VOLTAGE VERTICAL TRANSISTOR

PROBLEM TO BE SOLVED: To provide processes for manufacturing a semiconductor device structure and a high-voltage transistor. SOLUTION: As one embodiment, a transistor manufactured on a semiconductor die includes a first section of a transistor segment arranged in a first area of the semiconductor die, and a second section of a transistor segment arranged in a second area adjacent to the first area of the semiconductor die. Each of the transistor segments in the first and second sections includes a pillar of a semiconductor material extending in a vertical direction. First and second dielectric regions are arranged at both sides of the pillar. First and second field plates are arranged in the first and second dielectric regions, respectively. Outer field plates of transistor segments adjacent to first and second sections are separated or partially merged. This summary is offered to searchers or other viewers as to be able to quickly search for the invention concerned. COPYRIGHT: (C)2008,JPO&INPIT