MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To prevent breakage of a thin-film probe and a wafer to be inspected, relating to probe inspection which uses the thin-film probe that comprises a probe formed using a manufacturing technology for a semiconductor integrated circuit device. SOLUTION: By an imaging means such as...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: OKAYAMA MASAO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To prevent breakage of a thin-film probe and a wafer to be inspected, relating to probe inspection which uses the thin-film probe that comprises a probe formed using a manufacturing technology for a semiconductor integrated circuit device. SOLUTION: By an imaging means such as a camera, the picture of a region PCA, where a chip 10 is positioned at the center, in a wafer surface that contains a region OGA pressurized by a pressurizing tool immediately after probe inspection is performed by comparing the picture of a normal chip 10 that has been acquired in advance with every chip 10 in the region PCA, the presence of an abnormal form is determined for every chip 10 in the region PCA. COPYRIGHT: (C)2008,JPO&INPIT