PATTERN CORRECTION METHOD FOR PHOTOMASK AND PHOTOMASK

PROBLEM TO BE SOLVED: To provide a pattern correction method for a photomask in which edge correction is carried out by dividing an edge, imparting evaluation points and calculating the proximity effect by use of OPC (optical proximity correction) techniques, and to provide a photomask. SOLUTION: Th...

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Bibliographische Detailangaben
1. Verfasser:	KAGEYAMA KIYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a pattern correction method for a photomask in which edge correction is carried out by dividing an edge, imparting evaluation points and calculating the proximity effect by use of OPC (optical proximity correction) techniques, and to provide a photomask. SOLUTION: The pattern correction method for a photomask includes: an edge number imparting step of imparting edge numbers to edges constituting at least the original outline; an edge dividing-evaluation point distribution step of dividing an edge in every edge number and imparting an evaluation point to the center of the divided edge; an edge correction step of calculating an influence degree at every evaluation point and shifting the edge; a prototype edge correction step of averaging two parts when an edge in the input data is divided into two parts; and a prototype edge correction step of moving edges at both ends by the same shift amount of the center part when an edge in the input data is divided into three parts. COPYRIGHT: (C)2008,JPO&INPIT