CAPACITOR-CONTAINING CHIP CARRIER SUBSTRATE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a chip carrier substrate comprising a capacitor aperture and a laterally separated via an aperture each of which is located in a substrate. SOLUTION: The capacitor aperture has a narrower line width and a shallower depth than those of the via aperture to obtain a mic...

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Hauptverfasser: PATEL CHIRAG SURYAKANT, ANDRY PAUL STEPHEN
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a chip carrier substrate comprising a capacitor aperture and a laterally separated via an aperture each of which is located in a substrate. SOLUTION: The capacitor aperture has a narrower line width and a shallower depth than those of the via aperture to obtain a microloading effect in a plasma etching method that is used for simultaneously etching the capacitor aperture and the via aperture in the substrate. Subsequently a capacitor is formed and located in the capacitor aperture and a via is formed and located in the via apertures. Various combinations of a first capacitor plate layer, a capacitor dielectric layer and a second capacitor plate layer may be obtained continuously with respect to the capacitor aperture and the via aperture. COPYRIGHT: (C)2008,JPO&INPIT