SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell technology which reduces coupling capacitance related to a gate electrode for charge accumulation. SOLUTION: On the main surface of a semiconductor substrate 1, a plurality of nonvolatile memory cells constituting a flash memory is formed. E...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: ISHIGAKI YOSHIYUKI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!