SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device having a salicide structure wherein the fine wire resistance of the gate can be improved without deterioration of junction leakage characteristics. SOLUTION: The semiconductor device comprises a gate electrode 13 consisting of a polysilicon film 14 and a silicide film 15 which are formed on a silicon substrate 1 via a gate insulation film 12, a diffusion layer 17 in which predetermined conductivity type impurity ions are diffused and which is formed with a channel region below the gate electrode 13 interposed, source and drain regions consisting of a silicide film 18 formed on the surface of the diffusion layer 17. The thickness of the silicide film 15 of the gate electrode 13 is larger than that of the silicide film 18 on the diffusion layer 17. COPYRIGHT: (C)2008,JPO&INPIT