ELECTRODE FILM FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an electrode film that can eliminate growing of spike. SOLUTION: A rear electrode film 5 is provided with an adhesion layer 11, a defusion prevention layer 12, a barrier layer 13, an electrode body layer 14, and an affinity layer 15, which are formed in this order on the surface of a collector layer 31. The affinity layer 15 is connected to a stage by means of a low-melting-point metal layer 16. The adhesion layer 11 is made of aluminum alloy, and the defusion prevention layer 12 is made of a metal that contains one kind among Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, Ta, W and Co. The electrode body layer 14 is made of Ni alloy, and the barrier layer 13 is made of nitride of the metal forming the defusion prevention layer 12. COPYRIGHT: (C)2008,JPO&INPIT