CHEMICAL MECHANICAL POLISHING PAD

PROBLEM TO BE SOLVED: To obtain a chemical mechanical polishing pad suitable for polishing at least one of a semiconductor, optical, and magnetic substrates. SOLUTION: The polishing pad 2 has a high modulus component forming a continuous polymeric matrix 6 and an impact modifier 4 within the continu...

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Bibliographische Detailangaben
Hauptverfasser:	JAMES DAVID B, KULP MARY JO, ANTRIM ROBERT F
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a chemical mechanical polishing pad suitable for polishing at least one of a semiconductor, optical, and magnetic substrates. SOLUTION: The polishing pad 2 has a high modulus component forming a continuous polymeric matrix 6 and an impact modifier 4 within the continuous polymeric matrix 6. The high modulus component has a modulus of at least 100 MPa. The impact modifier 4 includes a low modulus component having a modulus of at least one order of magnitude less than the high modulus component that increases the impact resistance of the polishing pad. COPYRIGHT: (C)2008,JPO&INPIT