FORMING METHOD OF PHASE-CHANGE MATERIAL LAYER, MANUFACTURING METHOD OF PHASE-CHANGE MEMORY ELEMENT USING THIS METHOD

PROBLEM TO BE SOLVED: To provide a forming method of a phase-change material layer and a manufacturing method of a phase-change memory element using this method. SOLUTION: There is provided a forming method of a phase-change layer, for forming the phase-change layer by an electrochemical deposition...

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Bibliographische Detailangaben
Hauptverfasser: KANG YOUN-SEON, SHIN WOONGUL, HAKU KEITO, OH SEUNG-JIN
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a forming method of a phase-change material layer and a manufacturing method of a phase-change memory element using this method. SOLUTION: There is provided a forming method of a phase-change layer, for forming the phase-change layer by an electrochemical deposition method, including: a first step of forming electrolyte by mixing a precursor and a solvent containing elements that constitute the phase-change layer respectively; a second step of immersing into the electrolyte an anode plate and a cathode plate having a substrate on which the phase-change layer is deposited in a state of being spaced from each other; a third step of setting a depositing condition of the phase-change layer; and a fourth step of applying voltage between the anode plate and the cathode plate. COPYRIGHT: (C)2008,JPO&INPIT