PROCESS FOR ADJUSTING FEED RATE IN ELECTRON-BEAM PHYSICAL VAPOR DEPOSITION APPARATUS, ELECTRON BEAM PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING MULTI-COMPONENT CONDENSATE FREE OF LAMINATION USING THE APPARATUS

PROBLEM TO BE SOLVED: To provide an EB-PVD (Electron-Beam Physical Vapor Deposition) apparatus equipped with an independent system designed to monitor and maintain a constant relative level of the molten pool within the EB-PVD chamber. SOLUTION: A process for adjusting a feed rate in an electron-bea...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	BARABASH YURIY M, MULLIN RICHARD S, KONONENKO YURIY G, BELOUSOV IGOR V
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an EB-PVD (Electron-Beam Physical Vapor Deposition) apparatus equipped with an independent system designed to monitor and maintain a constant relative level of the molten pool within the EB-PVD chamber. SOLUTION: A process for adjusting a feed rate in an electron-beam physical vapor deposition apparatus includes the steps of: positioning a target at first height within a chamber of an electron-beam physical vapor deposition apparatus; feeding the target at a prediscribed rate into a beam of electrons generated by an electron gun of the electron-beam physical vapor deposition apparatus; evaporating the target with the beam of electrons; monitoring the first height by measuring a difference between a first light intensity and a second light intensity of at least one image of the target using an optical sensor disposed proximate to the chamber; determining a change in the first height; and adjusting a target feed rate. COPYRIGHT: (C)2008,JPO&INPIT