LOW-TEMPERATURE JOINING MATERIAL AND JOINING METHOD

PROBLEM TO BE SOLVED: To provide a joining material and a joining process that can achieve low-temperature joining during the joining stage in a mounting process, and to provide a semiconductor package in which no long term reliability is impaired even under a high temperature environment. SOLUTION:...

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Bibliographische Detailangaben
Hauptverfasser: IDE HIDEKAZU, ISHII TOSHIAKI, MORITA TOSHIAKI, YASUDA TAKESUKE, HOZOJI HIROYUKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a joining material and a joining process that can achieve low-temperature joining during the joining stage in a mounting process, and to provide a semiconductor package in which no long term reliability is impaired even under a high temperature environment. SOLUTION: In a joining material using metallic particles whose average grain size coated with an organic matter is ≤100 μm, the joining material is characterized in that one or more peaks are possessed in a grain-size distribution in the volume criterium of ≤100 nm and ≤100 nm-100 μm respectively and that the carbon number of the organic component coating the metallic particles is 2-8. COPYRIGHT: (C)2008,JPO&INPIT