FILM DEPOSITION METHOD AND FILM DEPOSITION SYSTEM

PROBLEM TO BE SOLVED: To provide a film deposition method capable of easily depositing a uniform film without changing the composition of powder. SOLUTION: Regarding the method in this invention, high pressure d.c. voltage is applied to a space between an upper electrode 5 holding a substrate K in w...

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Bibliographische Detailangaben
Hauptverfasser:	SUNAYAMA KAZUYUKI, INOUE TETSUYA, OKAMOTO HIDETAKE
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a film deposition method capable of easily depositing a uniform film without changing the composition of powder. SOLUTION: Regarding the method in this invention, high pressure d.c. voltage is applied to a space between an upper electrode 5 holding a substrate K in which a thin film is formed on the surface and a lower electrode 7 mounted with powder P as a film material in a vessel 3 under a vacuum, so as to form an electrostatic field between both the electrodes 5, 7, and the powder P is reciprocated between both the electrodes 5, 7 by an electric field generated at the electrostatic field, thus the powder P is stuck to the surface of the substrate K, so as to deposit a film. COPYRIGHT: (C)2008,JPO&INPIT