SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same capable of forming a transistor having a high current driving ability and a high-voltage withstanding transistor and of easily manufacturing an enhancement type transistor and a depression type transistor...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same capable of forming a transistor having a high current driving ability and a high-voltage withstanding transistor and of easily manufacturing an enhancement type transistor and a depression type transistor on the same substrate. SOLUTION: On an insulating substrate 1, a backing oxide film 2 and an a-Si film 3 are formed, impurity ions are implanted, laser light is irradiated for melting/re-crystallization, and thus a p-type polycrystalline silicon film 3 is formed and machined into an island shape. A gate oxide film 5 and a gate electrode 5e are formed. After a passivation film 6 is formed and a contact hole c for taking out an electrode are formed, the depression type transistor side is coated with a resist material r, impurity ions are implanted into the enhancement type transistor side using the gate electrode 5e as a mask, and thus an n-type source region 7 and a drain region 8 are formed. By the irradiation of laser light, the implanted ion impurities and the crystal damaged at the time of implantation are subjected to the activation and the restoration process, respectively. Next, the resist material r on the depression type transistor side is removed. COPYRIGHT: (C)2008,JPO&INPIT |
---|