THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of ensuring a satisfactory source-drain breakdown voltage on a semiconductor thin film, to provide a method of manufacturing the thin-film transistor, and to provide a display device. SOLUTION: The thin-film transistor comprises: the semiconductor thin film 12 provided on an insulating support substrate 10; a gate insulating film 14 provided on the semiconductor thin film 12; and a gate electrode layer 16 formed on the semiconductor thin film 12 via the gate insulating film 14. The semiconductor thin film 12 includes: a channel region 12C arranged at the lower portion of the gate electrode layer 16; source and drain regions 12S, 12D arranged at both sides of the channel region 12C; and an LDD region 12LD arranged between the channel region 12C and the drain region 12D. The channel region 12C has an impurity concentration profile where impurity concentration becomes higher from the interface to the gate insulating film 14 to that to the support substrate 10 in the thickness direction of the semiconductor thin film 12. The source region 12S and the LDD region 12LD have an impurity concentration profile that becomes lower from the interface to the gate insulating film 14 to that to the support substrate 10 in the thickness direction of the semiconductor thin film 12. COPYRIGHT: (C)2008,JPO&INPIT