SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device with highly reliable copper wiring by improving electromigration resistance of the copper wiring without increasing leakage between wires and lowering product yielding, and its manufacturing method. SOLUTION: A metal oxide film layer 14 is form...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	HINOMURA TORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device with highly reliable copper wiring by improving electromigration resistance of the copper wiring without increasing leakage between wires and lowering product yielding, and its manufacturing method. SOLUTION: A metal oxide film layer 14 is formed entirely on a copper layer wiring layer, whereby the metal oxide film layer 14 inhibiting diffusion of copper atoms can be uniformly formed only on the surface of the wiring layer without raising wiring resistance, increasing the leakage between the wires and lowering the product yield. The copper wiring with high electromigration resistance can thus be obtained. COPYRIGHT: (C)2008,JPO&INPIT