METHOD FOR MANUFACTURING SOLAR CELL
PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily at a low cost, in which an expensive, large energy consumption-type and large-scale apparatus is not required and which can cope with even a substrate having a large area. SOLUTION: A solar cell to be manufactured...
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creator | SHIHO KOUJI KATO HITOSHI |
description | PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily at a low cost, in which an expensive, large energy consumption-type and large-scale apparatus is not required and which can cope with even a substrate having a large area. SOLUTION: A solar cell to be manufactured has such a structure between a pair of electrodes that at least two layers of the semiconductor thin films different in the concentration and/or kind of an impurity are layered. The method for forming at least one layer of the semiconductor thin films comprises the steps of: applying a silane composition, which contains the polysilane compound (A) shown by the formula: SinRmand at least one silane compound (B) selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane, onto a substrate to form the thin film; and treating the formed thin film thermally and/or optically. COPYRIGHT: (C)2008,JPO&INPIT |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008143782A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008143782A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008143782A3</originalsourceid><addsrcrecordid>eNrjZFD2dQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXCPb3cQxScHb18eFhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBhaGJsbmFkaOxkQpAgCZ9CMh</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MANUFACTURING SOLAR CELL</title><source>esp@cenet</source><creator>SHIHO KOUJI ; KATO HITOSHI</creator><creatorcontrib>SHIHO KOUJI ; KATO HITOSHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily at a low cost, in which an expensive, large energy consumption-type and large-scale apparatus is not required and which can cope with even a substrate having a large area. SOLUTION: A solar cell to be manufactured has such a structure between a pair of electrodes that at least two layers of the semiconductor thin films different in the concentration and/or kind of an impurity are layered. The method for forming at least one layer of the semiconductor thin films comprises the steps of: applying a silane composition, which contains the polysilane compound (A) shown by the formula: SinRmand at least one silane compound (B) selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane, onto a substrate to form the thin film; and treating the formed thin film thermally and/or optically. COPYRIGHT: (C)2008,JPO&INPIT</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080626&DB=EPODOC&CC=JP&NR=2008143782A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080626&DB=EPODOC&CC=JP&NR=2008143782A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIHO KOUJI</creatorcontrib><creatorcontrib>KATO HITOSHI</creatorcontrib><title>METHOD FOR MANUFACTURING SOLAR CELL</title><description>PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily at a low cost, in which an expensive, large energy consumption-type and large-scale apparatus is not required and which can cope with even a substrate having a large area. SOLUTION: A solar cell to be manufactured has such a structure between a pair of electrodes that at least two layers of the semiconductor thin films different in the concentration and/or kind of an impurity are layered. The method for forming at least one layer of the semiconductor thin films comprises the steps of: applying a silane composition, which contains the polysilane compound (A) shown by the formula: SinRmand at least one silane compound (B) selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane, onto a substrate to form the thin film; and treating the formed thin film thermally and/or optically. COPYRIGHT: (C)2008,JPO&INPIT</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2dQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXCPb3cQxScHb18eFhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBhaGJsbmFkaOxkQpAgCZ9CMh</recordid><startdate>20080626</startdate><enddate>20080626</enddate><creator>SHIHO KOUJI</creator><creator>KATO HITOSHI</creator><scope>EVB</scope></search><sort><creationdate>20080626</creationdate><title>METHOD FOR MANUFACTURING SOLAR CELL</title><author>SHIHO KOUJI ; KATO HITOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008143782A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIHO KOUJI</creatorcontrib><creatorcontrib>KATO HITOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIHO KOUJI</au><au>KATO HITOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MANUFACTURING SOLAR CELL</title><date>2008-06-26</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily at a low cost, in which an expensive, large energy consumption-type and large-scale apparatus is not required and which can cope with even a substrate having a large area. SOLUTION: A solar cell to be manufactured has such a structure between a pair of electrodes that at least two layers of the semiconductor thin films different in the concentration and/or kind of an impurity are layered. The method for forming at least one layer of the semiconductor thin films comprises the steps of: applying a silane composition, which contains the polysilane compound (A) shown by the formula: SinRmand at least one silane compound (B) selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane, onto a substrate to form the thin film; and treating the formed thin film thermally and/or optically. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | METHOD FOR MANUFACTURING SOLAR CELL |
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