METHOD FOR MANUFACTURING SOLAR CELL

PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily at a low cost, in which an expensive, large energy consumption-type and large-scale apparatus is not required and which can cope with even a substrate having a large area. SOLUTION: A solar cell to be manufactured...

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Hauptverfasser:	SHIHO KOUJI, KATO HITOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor thin film easily at a low cost, in which an expensive, large energy consumption-type and large-scale apparatus is not required and which can cope with even a substrate having a large area. SOLUTION: A solar cell to be manufactured has such a structure between a pair of electrodes that at least two layers of the semiconductor thin films different in the concentration and/or kind of an impurity are layered. The method for forming at least one layer of the semiconductor thin films comprises the steps of: applying a silane composition, which contains the polysilane compound (A) shown by the formula: SinRmand at least one silane compound (B) selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane, onto a substrate to form the thin film; and treating the formed thin film thermally and/or optically. COPYRIGHT: (C)2008,JPO&INPIT