BASE MATERIAL FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To prevent a substrate from warping by a stress relaxation pattern, to eliminate the problem of a decrease in strength of a stress relaxation pattern, and to suppress outflow of cooling gas through the stress relaxation pattern according to need. SOLUTION: A base material has t...

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Bibliographische Detailangaben
Hauptverfasser: HOUCHIN RIYUUZOU, OKITA SHOGO
Format: Patent
Sprache:eng
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