BASE MATERIAL FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To prevent a substrate from warping by a stress relaxation pattern, to eliminate the problem of a decrease in strength of a stress relaxation pattern, and to suppress outflow of cooling gas through the stress relaxation pattern according to need. SOLUTION: A base material has the substrate 1, a mask layer 2 having a processing pattern 4 for etching processing of the substrate 1, and the stress relaxation pattern 3 provided in a peripheral area 4b of the mask layer 2 to relax internal stress warping the substrate 1, and the stress relaxation pattern 3 is provided in a discontinuous pattern shape from an inside position to an outer circumferential position of the substrate 1 and includes a hole pattern portion 3a. COPYRIGHT: (C)2008,JPO&INPIT