SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which the permeation of water and hydrogen into a capacitor structure is prevented as much as possible, and influence on a dielectric behavior, variation in contact resistance, and the like are suppressed by forming an interl...

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1. Verfasser: IZUMI TAKATOSHI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator IZUMI TAKATOSHI
description PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which the permeation of water and hydrogen into a capacitor structure is prevented as much as possible, and influence on a dielectric behavior, variation in contact resistance, and the like are suppressed by forming an interlayer insulating film having extremely low in-plane film thickness distribution and an extremely excellent surface flatness property. SOLUTION: A laminated film constituted by a first insulating film 3 which is a silicon oxide film whose water content is extremely low and a second insulating film 4 which is a silicon oxide film whose water content is higher than that of the first insulating film 3 and whose in-plane film thickness distribution rate is therefore low is formed. The laminated film is polished by CMP. Immediately above a ferroelectric capacitor structure 2, the second insulating film 4 is utterly removed and polishing is carried out until the surface of the first insulating film 3 is exposed to some extent. At this time, an interlayer insulating film 10 which is constituted by carrying out surface planarization from the upper surface of a first portion in the first insulating film 3 to the upper surface of the second insulating film 4 and which includes the first insulating film 3 and the second insulating film 4 remaining on the second portion of the first insulating film 3 is formed. COPYRIGHT: (C)2008,JPO&INPIT
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008135669A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008135669A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008135669A3</originalsourceid><addsrcrecordid>eNrjZDAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8AwJVvB19At1c3QOCQ3y9HNX8HUN8fB34WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGFobGpmZmlo7GRCkCAKq7JyM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><source>esp@cenet</source><creator>IZUMI TAKATOSHI</creator><creatorcontrib>IZUMI TAKATOSHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which the permeation of water and hydrogen into a capacitor structure is prevented as much as possible, and influence on a dielectric behavior, variation in contact resistance, and the like are suppressed by forming an interlayer insulating film having extremely low in-plane film thickness distribution and an extremely excellent surface flatness property. SOLUTION: A laminated film constituted by a first insulating film 3 which is a silicon oxide film whose water content is extremely low and a second insulating film 4 which is a silicon oxide film whose water content is higher than that of the first insulating film 3 and whose in-plane film thickness distribution rate is therefore low is formed. The laminated film is polished by CMP. Immediately above a ferroelectric capacitor structure 2, the second insulating film 4 is utterly removed and polishing is carried out until the surface of the first insulating film 3 is exposed to some extent. At this time, an interlayer insulating film 10 which is constituted by carrying out surface planarization from the upper surface of a first portion in the first insulating film 3 to the upper surface of the second insulating film 4 and which includes the first insulating film 3 and the second insulating film 4 remaining on the second portion of the first insulating film 3 is formed. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080612&amp;DB=EPODOC&amp;CC=JP&amp;NR=2008135669A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080612&amp;DB=EPODOC&amp;CC=JP&amp;NR=2008135669A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IZUMI TAKATOSHI</creatorcontrib><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which the permeation of water and hydrogen into a capacitor structure is prevented as much as possible, and influence on a dielectric behavior, variation in contact resistance, and the like are suppressed by forming an interlayer insulating film having extremely low in-plane film thickness distribution and an extremely excellent surface flatness property. SOLUTION: A laminated film constituted by a first insulating film 3 which is a silicon oxide film whose water content is extremely low and a second insulating film 4 which is a silicon oxide film whose water content is higher than that of the first insulating film 3 and whose in-plane film thickness distribution rate is therefore low is formed. The laminated film is polished by CMP. Immediately above a ferroelectric capacitor structure 2, the second insulating film 4 is utterly removed and polishing is carried out until the surface of the first insulating film 3 is exposed to some extent. At this time, an interlayer insulating film 10 which is constituted by carrying out surface planarization from the upper surface of a first portion in the first insulating film 3 to the upper surface of the second insulating film 4 and which includes the first insulating film 3 and the second insulating film 4 remaining on the second portion of the first insulating film 3 is formed. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8AwJVvB19At1c3QOCQ3y9HNX8HUN8fB34WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGFobGpmZmlo7GRCkCAKq7JyM</recordid><startdate>20080612</startdate><enddate>20080612</enddate><creator>IZUMI TAKATOSHI</creator><scope>EVB</scope></search><sort><creationdate>20080612</creationdate><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><author>IZUMI TAKATOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008135669A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IZUMI TAKATOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IZUMI TAKATOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><date>2008-06-12</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which the permeation of water and hydrogen into a capacitor structure is prevented as much as possible, and influence on a dielectric behavior, variation in contact resistance, and the like are suppressed by forming an interlayer insulating film having extremely low in-plane film thickness distribution and an extremely excellent surface flatness property. SOLUTION: A laminated film constituted by a first insulating film 3 which is a silicon oxide film whose water content is extremely low and a second insulating film 4 which is a silicon oxide film whose water content is higher than that of the first insulating film 3 and whose in-plane film thickness distribution rate is therefore low is formed. The laminated film is polished by CMP. Immediately above a ferroelectric capacitor structure 2, the second insulating film 4 is utterly removed and polishing is carried out until the surface of the first insulating film 3 is exposed to some extent. At this time, an interlayer insulating film 10 which is constituted by carrying out surface planarization from the upper surface of a first portion in the first insulating film 3 to the upper surface of the second insulating film 4 and which includes the first insulating film 3 and the second insulating film 4 remaining on the second portion of the first insulating film 3 is formed. COPYRIGHT: (C)2008,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T05%3A05%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=IZUMI%20TAKATOSHI&rft.date=2008-06-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2008135669A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true