SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which the permeation of water and hydrogen into a capacitor structure is prevented as much as possible, and influence on a dielectric behavior, variation in contact resistance, and the like are suppressed by forming an interlayer insulating film having extremely low in-plane film thickness distribution and an extremely excellent surface flatness property. SOLUTION: A laminated film constituted by a first insulating film 3 which is a silicon oxide film whose water content is extremely low and a second insulating film 4 which is a silicon oxide film whose water content is higher than that of the first insulating film 3 and whose in-plane film thickness distribution rate is therefore low is formed. The laminated film is polished by CMP. Immediately above a ferroelectric capacitor structure 2, the second insulating film 4 is utterly removed and polishing is carried out until the surface of the first insulating film 3 is exposed to some extent. At this time, an interlayer insulating film 10 which is constituted by carrying out surface planarization from the upper surface of a first portion in the first insulating film 3 to the upper surface of the second insulating film 4 and which includes the first insulating film 3 and the second insulating film 4 remaining on the second portion of the first insulating film 3 is formed. COPYRIGHT: (C)2008,JPO&INPIT