MANUFACTURING METHOD OF SOLAR BATTERY, AND MANUFACTURING DEVICE OF SOLAR BATTERY

PROBLEM TO BE SOLVED: To manufacture the solar battery of high energy conversion efficiency. SOLUTION: By oxidizing the surface layer of a polysilicon layer Sn to be an n-type layer formed on a polysilicon substrate Sp to be a p-type layer by using plasma and depositing a silicon nitride film by CVD...

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Bibliographische Detailangaben
1. Verfasser:	MURAKAWA EMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To manufacture the solar battery of high energy conversion efficiency. SOLUTION: By oxidizing the surface layer of a polysilicon layer Sn to be an n-type layer formed on a polysilicon substrate Sp to be a p-type layer by using plasma and depositing a silicon nitride film by CVD treatment thereafter, passivation films A1 and A2 are formed on the surface layer of the polysilicon layer Sn. The plasma oxidation treatment is executed under such a condition that a pressure is in the range of 6.67 Pa to 6.67×102Pa and a temperature is in the range of 200°C to 600°C by using the plasma of a sheath potential ≤10 eV. Microwaves for exciting the plasma are supplied through a slot antenna into a treatment container and the plasma is generated by the surface waves of the microwaves. COPYRIGHT: (C)2008,JPO&INPIT