FILM FORMATION MATERIAL AND METHOD

PROBLEM TO BE SOLVED: To provide a film formation material and a film formation method capable of forming an insulating film (dielectric film) in a semiconductor device (element) where a film that can improve signal processing speed, has small permittivity, has mechanical strength capable of withsta...

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Bibliographische Detailangaben
Hauptverfasser:	JO EIKA, MACHIDA HIDEAKI, MURAMOTO IKUYO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a film formation material and a film formation method capable of forming an insulating film (dielectric film) in a semiconductor device (element) where a film that can improve signal processing speed, has small permittivity, has mechanical strength capable of withstanding CMP (chemical/mechanical polishing), further has high in-plane uniformity in the formed film, and has small variations among lots is easily formed under gentle film formation conditions (having a wide range of optimum film formation conditions). SOLUTION: The material for forming a film is an Si compound, having one cycloalkyl group having 4-7 carbons, one alkyl group having 1-3 carbons, and two alkoxy groups having 1-3 carbons. COPYRIGHT: (C)2008,JPO&INPIT