METHOD OF FORMING Ru FILM AND METAL WIRING STRUCTURE
PROBLEM TO BE SOLVED: To provide a method of forming a continuous ruthenium (Ru) thin film in a wiring structure used in a high-speed logic circuit element. SOLUTION: A method of depositing a ruthenium (Ru) thin film on a substrate includes the following steps of: (i) processing a surface of the sub...
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| creator | JINRIKI HIROSHI INOUE HIROAKI |
| description | PROBLEM TO BE SOLVED: To provide a method of forming a continuous ruthenium (Ru) thin film in a wiring structure used in a high-speed logic circuit element. SOLUTION: A method of depositing a ruthenium (Ru) thin film on a substrate includes the following steps of: (i) processing a surface of the substrate with an organometallic precursor; (ii) adsorbing a ruthenium precursor to the processed surface of the substrate; (iii) processing the adsorbed ruthenium precursor with an excited reducing gas; and (iv) repeating the steps (ii) and (iii) to form the ruthenium thin film on the substrate. COPYRIGHT: (C)2008,JPO&INPIT |
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SOLUTION: A method of depositing a ruthenium (Ru) thin film on a substrate includes the following steps of: (i) processing a surface of the substrate with an organometallic precursor; (ii) adsorbing a ruthenium precursor to the processed surface of the substrate; (iii) processing the adsorbed ruthenium precursor with an excited reducing gas; and (iv) repeating the steps (ii) and (iii) to form the ruthenium thin film on the substrate. 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SOLUTION: A method of depositing a ruthenium (Ru) thin film on a substrate includes the following steps of: (i) processing a surface of the substrate with an organometallic precursor; (ii) adsorbing a ruthenium precursor to the processed surface of the substrate; (iii) processing the adsorbed ruthenium precursor with an excited reducing gas; and (iv) repeating the steps (ii) and (iii) to form the ruthenium thin film on the substrate. 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SOLUTION: A method of depositing a ruthenium (Ru) thin film on a substrate includes the following steps of: (i) processing a surface of the substrate with an organometallic precursor; (ii) adsorbing a ruthenium precursor to the processed surface of the substrate; (iii) processing the adsorbed ruthenium precursor with an excited reducing gas; and (iv) repeating the steps (ii) and (iii) to form the ruthenium thin film on the substrate. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD OF FORMING Ru FILM AND METAL WIRING STRUCTURE |
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