POLISHING SOLUTION FOR CMP AND POLISHING METHOD OF SUBSTRATE

PROBLEM TO BE SOLVED: To provide a polishing solution for CMP which can highly planarize a substrate without reducing a polishing speed at the formation of buried wiring of a metal film by CMP method, and can inhibit dishing and erosion, and to provide a polishing method of substrates. SOLUTION: A polishing solution for CMP used to polish one or more selected from the group consisting of tungsten, tungsten nitride, tungsten alloy and other tungsten compounds comprises an abrasive grain, metal oxidant, a metal oxide resolvent, a metal anticorrosive, and water, wherein the metal anticorrosive comprises a compound having an imidazole skeleton. A process of polishing a substrate to form a conductor-buried wiring in a semiconductor integrated circuit comprises causing a relative movement between a polishing table and a substrate in a state that the substrate having a conductor deposition film and a barrier metal film beneath is pressed onto the polishing fabric, while supplying the polishing solution onto the polishing fabric on the polishing table, and continuously polishing the conductor deposition film and the barrier metal film. COPYRIGHT: (C)2008,JPO&INPIT