FERROELECTRIC MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a ferroelectric memory device having a structure that prevents exfoliation between an upper electrode and a ferroelectric film or between the upper electrode and an insulating film while reducing resistance of the upper electrode as a cell plate, and also, suppresses the occurrence of characteristic variations in ferroelectric capacitive element. SOLUTION: The ferroelectric memory device is provided with lower insulating films 105, 108, and 112 formed on a semiconductor substrate 100, a plurality of ferroelectric capacitive elements arrayed in a word-line direction and in a bit-line direction and respectively composed of a lower electrode 110, a ferroelectric film 111, and an upper electrode 113, and an upper insulating film 115 covering a plurality of the ferroelectric capacitive elements. The upper electrodes 113 constitute a common upper electrode shared by a plurality of the ferroelectric capacitive elements. The upper insulating film 115 is joined with the lower insulating film 112 via a plurality of opening parts 114 provided in the common upper electrode. COPYRIGHT: (C)2008,JPO&INPIT