MASK ETCH PROCESS

PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching a metal layer disposed on a substrate such as a photolithographic reticle. SOLUTION: In one aspect, a method is provided for processing a substrate including steps of: positioning a substrate having a metal photomask layer, dispo...

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Hauptverfasser:	LEUNG TOI YUE BECKY, SABHARWAL AMITABH, GRIMBERGEN MICHAEL, CHANDRACHOOD MADHAVI R
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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creator	LEUNG TOI YUE BECKY SABHARWAL AMITABH GRIMBERGEN MICHAEL CHANDRACHOOD MADHAVI R
description	PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching a metal layer disposed on a substrate such as a photolithographic reticle. SOLUTION: In one aspect, a method is provided for processing a substrate including steps of: positioning a substrate having a metal photomask layer, disposed on an optically transparent material in a processing chamber; introducing a processing gas comprising an oxygen-containing gas, a chlorine-containing gas, at least one of trifluoromethane (CHF3), sulfur hexafluoride (SF6), hexafluoroethane (C2F6) or ammonia (NH3) and optionally a chlorine-free halogen-containing gas and/or an inert gas, into the processing chamber; generating a plasma of the processing gas in the processing chamber; and etching the exposed portions of the meta layer disposed on the substrate. COPYRIGHT: (C)2008,JPO&INPIT
format	Patent
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SOLUTION: In one aspect, a method is provided for processing a substrate including steps of: positioning a substrate having a metal photomask layer, disposed on an optically transparent material in a processing chamber; introducing a processing gas comprising an oxygen-containing gas, a chlorine-containing gas, at least one of trifluoromethane (CHF3), sulfur hexafluoride (SF6), hexafluoroethane (C2F6) or ammonia (NH3) and optionally a chlorine-free halogen-containing gas and/or an inert gas, into the processing chamber; generating a plasma of the processing gas in the processing chamber; and etching the exposed portions of the meta layer disposed on the substrate. 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subjects	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
title	MASK ETCH PROCESS
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