MASK ETCH PROCESS

MASK ETCH PROCESS

PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching a metal layer disposed on a substrate such as a photolithographic reticle. SOLUTION: In one aspect, a method is provided for processing a substrate including steps of: positioning a substrate having a metal photomask layer, dispo...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEUNG TOI YUE BECKY, SABHARWAL AMITABH, GRIMBERGEN MICHAEL, CHANDRACHOOD MADHAVI R
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching a metal layer disposed on a substrate such as a photolithographic reticle. SOLUTION: In one aspect, a method is provided for processing a substrate including steps of: positioning a substrate having a metal photomask layer, disposed on an optically transparent material in a processing chamber; introducing a processing gas comprising an oxygen-containing gas, a chlorine-containing gas, at least one of trifluoromethane (CHF3), sulfur hexafluoride (SF6), hexafluoroethane (C2F6) or ammonia (NH3) and optionally a chlorine-free halogen-containing gas and/or an inert gas, into the processing chamber; generating a plasma of the processing gas in the processing chamber; and etching the exposed portions of the meta layer disposed on the substrate. COPYRIGHT: (C)2008,JPO&INPIT