ZINC OXIDE BASED SPUTTERING TARGET

PROBLEM TO BE SOLVED: To obtain a zinc oxide based target with a low resistance satisfying ≤10-3Ωcm usable for producing a zinc oxide based thin film with a high resistance satisfying ≥107Ωcm using a DC sputtering process. SOLUTION: Zinc oxide and an additive(s) required for a zinc oxide-based mater...

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Bibliographische Detailangaben
Hauptverfasser:	FURUYAMA KOICHI, ASANO YASUAKI
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a zinc oxide based target with a low resistance satisfying ≤10-3Ωcm usable for producing a zinc oxide based thin film with a high resistance satisfying ≥107Ωcm using a DC sputtering process. SOLUTION: Zinc oxide and an additive(s) required for a zinc oxide-based material with a high resistance are mixed, the mixture is calcined, thereafter, metal zinc powder is added, they are mixed, and the mixture is sintered at a temperature lower than the melting point of metal zinc. COPYRIGHT: (C)2008,JPO&INPIT