LOW TEMPERATURE AEROSOL DEPOSITION OF PLASMA RESISTIVE LAYER

PROBLEM TO BE SOLVED: To provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. SOLUTION: In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator...

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Bibliographische Detailangaben
Hauptverfasser:	KATS SEMYON L, RYABOVA ELMIRA, THACH SENH, ZHU XI, SUN JENNIFER Y
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. SOLUTION: In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator, dispensing the aerosol from the aerosol generator into a processing chamber toward a surface of a substrate, maintaining the substrate temperature at between 0 degrees Celsius and 50 degrees Celsius, and depositing a layer from a material in the aerosol on the substrate surface. COPYRIGHT: (C)2008,JPO&INPIT