SILICON CARBIDE NANOSTRUCTURE AND ITS PRODUCING METHOD

SILICON CARBIDE NANOSTRUCTURE AND ITS PRODUCING METHOD

PROBLEM TO BE SOLVED: To provide a silicon carbide nanostructure having a combined shape and a method for producing the silicon carbide nanostructure. SOLUTION: The silicon carbide nanostructure has plate-like crystals consisting of silicon carbide grown epitaxially and perpendicularly to the side f...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHEN GUOZHEN, BANDO YOSHIO, DEMITRY GOLBERG
Format: Patent
Sprache:eng
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
MANUFACTURE OR TREATMENT THEREOF
METALLURGY
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
TRANSPORTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a silicon carbide nanostructure having a combined shape and a method for producing the silicon carbide nanostructure. SOLUTION: The silicon carbide nanostructure has plate-like crystals consisting of silicon carbide grown epitaxially and perpendicularly to the side face of a silicon carbide nanowire from the side face of the silicon carbide nanowire. The method for producing the silicon carbide nanostructure comprises a step of heating a mixture of silicon monoxide powder, graphite powder and gallium oxide powder in a current of an inert gas at 13×102to 14×102°C for 0.3-1.2 hours. COPYRIGHT: (C)2008,JPO&INPIT