NAND FLASH MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a NAND flash memory device comprising memory cells, etc. arrayed in a three-dimensional method, and to provide its manufacturing method. SOLUTION: This device includes a lower semiconductor layer 100; at least one upper semiconductor layer 200, arranged on the lower...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SON YANG-SOO, TEI SHUNBUN, JANG JAE-HOON, CHO WON-SEOK, JANG YOUNGUL, RAH YOUNG-SEOP
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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