SEMICONDUCTOR ELEMENT PROVIDED WITH BULB-TYPE RECESSED CHANNEL, AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor element provided with a bulb-type recessed channel which can prevent growth and move of a void produced inside a ball pattern when a conductive film used as a gate electrode is formed, and to provide its manufacturing method. SOLUTION: The method for...

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Hauptverfasser:	SUNG MIN-GYU, CHO KOZAI, KO KEN, YANA KOUZEN, LIM KWAN-YONG, KIN TAIJUN, JANG SE AUG, PYI SEUNG HO, LEE SEUNG-RYONG, KIM YONG-SOO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor element provided with a bulb-type recessed channel which can prevent growth and move of a void produced inside a ball pattern when a conductive film used as a gate electrode is formed, and to provide its manufacturing method. SOLUTION: The method for manufacturing the semiconductor element includes: a step for forming bulb-type recessed regions 24 and 26 on a substrate; a step for forming a gate insulating film 27 on the substrate 21B on which the bulb-type recessed regions 24 and 26 are formed; and a step for forming gate conductive films 28A and 29, which are constituted by two or more conductive films while having a discontinuous interface 30 between these conductive films, on the gate insulating film 27, to bury the bulb-type recessed regions 24 and 26. COPYRIGHT: (C)2008,JPO&INPIT