MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve dimensional accuracy of a gate pattern of a semiconductor device. SOLUTION: When a predetermined pattern including a plurality of gate patterns is formed, patterns are sorted into fine gate patterns and the other patterns (S102), and a hard mask film is formed on a w...

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Bibliographische Detailangaben
1. Verfasser:	FUJIMOTO TADASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve dimensional accuracy of a gate pattern of a semiconductor device. SOLUTION: When a predetermined pattern including a plurality of gate patterns is formed, patterns are sorted into fine gate patterns and the other patterns (S102), and a hard mask film is formed on a workpiece film (S106). Continuously, a first resist film having a fine first pattern is formed on the hard mask film for patterning of the hard mask film (S108). Then a resist film having another pattern is formed on the hard mask film, and the workpiece film is selectively dry-etched with the hard mask film and the resist film as masks (S110 and S112). COPYRIGHT: (C)2008,JPO&INPIT