NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which data can be transferred at high speed. SOLUTION: A sense amplifier part 106 reads a first plurality of bit data or a second plurality of bit data having second bit numbers being twice of the first plurality of bit da...

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1. Verfasser: MAKINO HIDEKAZU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which data can be transferred at high speed. SOLUTION: A sense amplifier part 106 reads a first plurality of bit data or a second plurality of bit data having second bit numbers being twice of the first plurality of bit data from a page buffer device 105 in accordance with an internal control signal having a period being twice of an external control signal for each second bit number and holds temporarily them as holding data. A data transfer control circuit 112 reads the holding data held by the sense amplifier part 106 in parallel in accordance with the internal control signal and transfers it. A data output part 112 receives data from the data transfer control circuit 112 and outputs it in accordance with the external control signal. COPYRIGHT: (C)2008,JPO&INPIT