NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which data can be transferred at high speed. SOLUTION: A sense amplifier part 106 reads a first plurality of bit data or a second plurality of bit data having second bit numbers being twice of the first plurality of bit da...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which data can be transferred at high speed. SOLUTION: A sense amplifier part 106 reads a first plurality of bit data or a second plurality of bit data having second bit numbers being twice of the first plurality of bit data from a page buffer device 105 in accordance with an internal control signal having a period being twice of an external control signal for each second bit number and holds temporarily them as holding data. A data transfer control circuit 112 reads the holding data held by the sense amplifier part 106 in parallel in accordance with the internal control signal and transfers it. A data output part 112 receives data from the data transfer control circuit 112 and outputs it in accordance with the external control signal. COPYRIGHT: (C)2008,JPO&INPIT |
---|