METHOD OF MANUFACTURING THIN FILM, METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film capable of stably forming the thin film having a uniform thickness on a substrate on which a conductive line pattern has been formed, a method of manufacturing a thin film transistor having superior characteristics, and the thin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OKADA MASAKAZU, HIRAO TAKEYA
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film capable of stably forming the thin film having a uniform thickness on a substrate on which a conductive line pattern has been formed, a method of manufacturing a thin film transistor having superior characteristics, and the thin film transistor. SOLUTION: The method of manufacturing the thin film has the steps of: providing a film manufacturing apparatus including a first discharge electrode, a second discharge electrode placed opposed to the first discharge electrode and a high frequency power source, which supplies high frequency power between the first discharge electrode and a second discharge electrode; placing a substrate on which a conductive line pattern has been formed on the second discharge electrode; applying the high frequency power from the high frequency power source while generating plasma by using discharged gas under an atmospheric pressure or a near-atmospheric pressure; and forming the thin film on the substrate. A space ratio (W/L) of a line width W (W>0) of the conductive line pattern to a spatial distance L between the first discharge electrode and the substrate is set not more than 0.1. COPYRIGHT: (C)2008,JPO&INPIT