METHOD FOR MAKING PHOTOMASK

PROBLEM TO BE SOLVED: To provide a method for making a photomask necessary for manufacturing a semiconductor device, avoiding a risk of a short circuit or the like in a dummy region among elements, circuits or wells. SOLUTION: The method for making a photomask includes, as one embodiment of the pres...

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Bibliographische Detailangaben
1. Verfasser:	IGARASHI MOTOSHIGE
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for making a photomask necessary for manufacturing a semiconductor device, avoiding a risk of a short circuit or the like in a dummy region among elements, circuits or wells. SOLUTION: The method for making a photomask includes, as one embodiment of the present invention: a first step of preparing a first pattern where a plurality of dummy regions are regularly disposed; a second step of preparing a second pattern where a pattern of an element and a circuit or a well pattern is scribed; a third step of superposing the first and second patterns and erasing the dummy region in a portion overlapping the element and the circuit or in a portion of the boundary of the well and determine the layout of the dummy regions; and a fourth step of making a photomask to which the dummy regions with determined layout and the pattern of elements and circuits or the well pattern are transferred. COPYRIGHT: (C)2008,JPO&INPIT