SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a static type memory cell such as a single end type and capable of performing writing by a column unit. SOLUTION: Data entered from an input data line DIN is written via write selectors WSLC1... and a write bit line WBITI into a m...

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1. Verfasser: SUMIYA NORIHIKO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a static type memory cell such as a single end type and capable of performing writing by a column unit. SOLUTION: Data entered from an input data line DIN is written via write selectors WSLC1... and a write bit line WBITI into a memory cell where column select signals CA1.. are at H levels among memory cells CELL (1, n)... of a row selected by write word lines WWL1... . In a memory cell where column select signals CA1... are at L levels, the held data is read to read bit lines RBIT1..., and written again (read back) via write selectors WSLC1... and a write bit line WBIT1, and thus original stored data is maintained. COPYRIGHT: (C)2008,JPO&INPIT