PLASMA CVD APPARATUS AND PLASMA CVD METHOD

PROBLEM TO BE SOLVED: To vapor-deposit carbon nanotubes on the whole surface of a substrate to be treated by utilizing a plasma CVD apparatus and plasma CVD method. SOLUTION: Carbon nanotubes are vapor-deposited on the whole surface of the substrate S to be treated by: using the plasma CVD apparatus...

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Hauptverfasser: AGAWA YOSHIAKI, MURAKAMI HIROHIKO, YAMAGUCHI KOICHI, KATSUMATA TAKASHI, NAKANO MINAO, HARA YASUHIRO, SUZUKI YASUMASA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To vapor-deposit carbon nanotubes on the whole surface of a substrate to be treated by utilizing a plasma CVD apparatus and plasma CVD method. SOLUTION: Carbon nanotubes are vapor-deposited on the whole surface of the substrate S to be treated by: using the plasma CVD apparatus 1 having a substrate stage 14, a plasma generating means, and a mesh-shaped shielding member 15 having the same shape and same area as the substrate stage or the same shape as the substrate stage and an area smaller than the substrate stage, which are provided in a vacuum chamber 11; and then bringing a raw material gas dissociated by plasma into contact with the substrate S to be treated on the substrate stage 14 while shielding plasma generated in the vacuum chamber 11 by the shielding member 15 provided between a plasma generation region and the substrate S to be treated. COPYRIGHT: (C)2008,JPO&INPIT