STABILIZATION OF NTIROGEN-CONTAINING AND OXYGEN-CONTAINING ORGANOSILANES USING WEAKLY BASIC ION-EXCHANGE RESIN

PROBLEM TO BE SOLVED: To provide a process for stabilizing a nitrogen-containing or oxygen-containing organosilane from the acid catalyzed attack and retard the resulting decomposition. SOLUTION: The nitrogen-containing organosilane with at least one Si-H or N-H group which is susceptible to product decomposition is treated with a process comprising: (a) a step to bring into contact with a weak basicity ion-exchange vehicle for removing a residual anion or residual metal cation; (b) a step of separating the organosilane from the weak basicity ion exchange resin; and (c) a step of distilling the organosilane. The anion or acid which attacks the Si-H group is discharged, and this decomposition is retarded. Dilute exposures to these anions can initiate significant decomposition and effect for product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films. COPYRIGHT: (C)2008,JPO&INPIT