SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To resolve a problem that wiring is decomposed owing to degassing from an insulating film and the reliability of a semiconductor device decreases in conventional semiconductor devices in which a space area and an insulating film are located between wiring. SOLUTION: In the semiconductor device, the insulating film located between wiring is composed of a first insulating film and a second insulating film. The first insulating film and the second insulating film are positioned so as to be laminated in the direction perpendicular to a semiconductor substrate or are located so as to be close to each other in the horizontal direction. The second insulating film is located between the first insulating film and the space area adjacent to the wiring. An effect of degassing from the first insulating film can be prevented using such a structure. COPYRIGHT: (C)2008,JPO&INPIT