PRECURSOR HAVING OPEN LIGAND FOR RUTHENIUM-CONTAINING FILM DEPOSITION

PROBLEM TO BE SOLVED: To provide ruthenium precursors solving such a problem that: the conventional ruthenium film has poor adhesion to a substrate; impurities increasing the resistivity of the film remains in the film; the ruthenium precursor has low vapor pressure; an underlying layer is partially...

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Hauptverfasser:	DUSSARAT CHRISTIAN, GATINEAU JULIEN
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide ruthenium precursors solving such a problem that: the conventional ruthenium film has poor adhesion to a substrate; impurities increasing the resistivity of the film remains in the film; the ruthenium precursor has low vapor pressure; an underlying layer is partially oxidized when oxygen is used as a co-reactant; and so on. SOLUTION: Ruthenium-containing precursors for ruthenium-containing films deposition comprises a ruthenium precursor selected from the group consisting mainly of: Ru(XOp)(XCp), Ru(XOp)2, Ru(allyl)3, RuX(allyl)2, RuX2(allyl)2, Ru(CO)x(amidinate)y, Ru(diketonate)2(amidinate)2, their derivatives and any mixture thereof. COPYRIGHT: (C)2008,JPO&INPIT