MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of cutting a wire easily, obtaining a bump electrode in an appropriate shape, and pulling out the wire from a capillary easily. SOLUTION: The manufacturing method of a semiconductor device comprises: a process...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: SHINKAWA HIDEYUKI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of cutting a wire easily, obtaining a bump electrode in an appropriate shape, and pulling out the wire from a capillary easily. SOLUTION: The manufacturing method of a semiconductor device comprises: a process for forming a bump electrode while partially biting into a capillary on a pad by a wire through the capillary; a process for raising the capillary by 30-45 μm; a process for raising the capillary and then moving the capillary laterally by 35-55 μm for thinning the wire; a process for thinning the wire and then raising the capillary for pulling out the wire from the capillary; and a process for pulling the wire from the capillary, and holding the wire with a clamper for pulling in an upper direction and for cutting the wire. COPYRIGHT: (C)2008,JPO&INPIT