SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein by using a porous inter-layer insulating film, reduction of mechanical strength and reduction of adhesiveness with an upper layer or a lower layer are suppressed, and to provide its manufacturing method. SOLUTION: The semiconductor dev...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KAMESHIMA TAKASUE, KAGAWA KEIEI, SHIMAYAMA TSUTOMU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein by using a porous inter-layer insulating film, reduction of mechanical strength and reduction of adhesiveness with an upper layer or a lower layer are suppressed, and to provide its manufacturing method. SOLUTION: The semiconductor device includes a porous first insulating film 8, which is provided on a substrate and made by decomposing and eliminating a porogen A, a second insulating film 9 provided on the first insulating film 8, and a conductive layer pattern 15', provided on the second insulating film 9 and the first insulating film 8 so as to reach a lower-layer wiring 6. The first insulating film 8 has a non-porous region 8A, in a condition where the porogen A remains. A method for manufacturing the semiconductor device is also disclosed. COPYRIGHT: (C)2008,JPO&INPIT