SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a semiconductor device for improving the reliability by preventing a conductive member from being oxidized, and to provide a manufacturing method of the semiconductor device. SOLUTION: A first insulating layer 100 is formed on a semiconductor substrate; a groove 107 is formed on the first insulating layer 100; a wiring layer 101 containing copper on the surface is formed in the groove 107; the surface of the wiring layer 101 is activated to form a cap film 105, containing cobalt on the surface of the wiring layer 101 by subjecting it to electroless plating method; plasma treatment is performed on the surface of the wiring layer 101, excluding the forming section of the cap film 105 by reactive gas containing silicon and nitrogen; a copper silicide film 106 containing nitrogen is formed; and a second insulating layer 103 is formed on the first insulating layer 100, the cap film 105, and the copper silicide film 106 containing nitrogen. COPYRIGHT: (C)2008,JPO&INPIT