METHOD OF FORMING RUTHENIUM FILM FOR METAL WIRING STRUCTURE

PROBLEM TO BE SOLVED: To provide a method of forming ruthenium (Ru) films for metal wiring structures that can be used favorably in producing fine semiconductor devices, by which thin and continuous Ru films can be formed. SOLUTION: In an embodiment, the present invention provides a method of depositing a ruthenium (Ru) film on a substrate in a reaction chamber, comprising: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, the ruthenium precursor a ruthenium complex containing a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate. COPYRIGHT: (C)2008,JPO&INPIT