POLISHING METHOD, POLISHING PAD AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a polishing method by which reduction of defect is compatible with maintenance of polishing characteristics, and to provide a polishing pad used for it, in polish of a metal wiring formed on a semiconductor substrate. SOLUTION: A polishing head has a polishing layer...

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Bibliographische Detailangaben
Hauptverfasser:	HASHISAKA KAZUHIKO, TABATA KENICHI, FUKUI ATSUKO, HANAMOTO MIYUKI, SAKAMOTO TAKUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing method by which reduction of defect is compatible with maintenance of polishing characteristics, and to provide a polishing pad used for it, in polish of a metal wiring formed on a semiconductor substrate. SOLUTION: A polishing head has a polishing layer which contains closed cells, and average cell diameter thereof is 100-300 μm, wherein light transmission of the wavelength of 500-850 nm to the thickness of 1 mm is 60% or more. A to-be-polished material fixed to the polishing head is, under the condition where it is brought into contact with the polishing pad with a polish pressure of 0.1-5 psi, polished by rotating the polishing head and/or a polishing plate. COPYRIGHT: (C)2008,JPO&INPIT