PHOTOSENSITIVE POLYMER FOR EXTREME ULTRAVIOLET RAY AND DEEP ULTRAVIOLET RAY AND PHOTORESIST COMPOSITION CONTAINING THE SAME
PROBLEM TO BE SOLVED: To provide a photosensitive polymer able to form fine patterns responding to extreme ultraviolet rays and deep ultraviolet rays, greatly reduce LER (line edge roughness) after development and improve safety of the line width of a formed pattern and a photoresist composition con...
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| creator | KIM DEOG-BAE KIM JAE-HYUN |
| description | PROBLEM TO BE SOLVED: To provide a photosensitive polymer able to form fine patterns responding to extreme ultraviolet rays and deep ultraviolet rays, greatly reduce LER (line edge roughness) after development and improve safety of the line width of a formed pattern and a photoresist composition containing the same. SOLUTION: The photosensitive polymer for extreme ultraviolet rays and deep ultraviolet rays comprises a repeating unit expressed by chemical formula (1) [wherein R1and R1' express each independently H, methyl or trifluoromethyl; R2expresses chemical formula (1-1)]. COPYRIGHT: (C)2008,JPO&INPIT |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008045125A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008045125A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008045125A3</originalsourceid><addsrcrecordid>eNqNjL0KwjAURrs4iPoOF3chVgtdQ3trIk1uSK7FTqVInEQLdfPl_cHRwel8cD7ONHk4RUwBbdCsGwRHdWvQQ0Ue8MgeDcKhZi8bTTUyeNmCtCWUiO6n-PQ8Bh0YCjKO3mGyr21ZaqvtDlghBGlwnkzO_WWMiy9nybJCLtQqDrcujkN_itd47_YuFSIX22ydZnLz1-kJUk88FA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTOSENSITIVE POLYMER FOR EXTREME ULTRAVIOLET RAY AND DEEP ULTRAVIOLET RAY AND PHOTORESIST COMPOSITION CONTAINING THE SAME</title><source>esp@cenet</source><creator>KIM DEOG-BAE ; KIM JAE-HYUN</creator><creatorcontrib>KIM DEOG-BAE ; KIM JAE-HYUN</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a photosensitive polymer able to form fine patterns responding to extreme ultraviolet rays and deep ultraviolet rays, greatly reduce LER (line edge roughness) after development and improve safety of the line width of a formed pattern and a photoresist composition containing the same. SOLUTION: The photosensitive polymer for extreme ultraviolet rays and deep ultraviolet rays comprises a repeating unit expressed by chemical formula (1) [wherein R1and R1' express each independently H, methyl or trifluoromethyl; R2expresses chemical formula (1-1)]. COPYRIGHT: (C)2008,JPO&INPIT</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080228&DB=EPODOC&CC=JP&NR=2008045125A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080228&DB=EPODOC&CC=JP&NR=2008045125A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM DEOG-BAE</creatorcontrib><creatorcontrib>KIM JAE-HYUN</creatorcontrib><title>PHOTOSENSITIVE POLYMER FOR EXTREME ULTRAVIOLET RAY AND DEEP ULTRAVIOLET RAY AND PHOTORESIST COMPOSITION CONTAINING THE SAME</title><description>PROBLEM TO BE SOLVED: To provide a photosensitive polymer able to form fine patterns responding to extreme ultraviolet rays and deep ultraviolet rays, greatly reduce LER (line edge roughness) after development and improve safety of the line width of a formed pattern and a photoresist composition containing the same. SOLUTION: The photosensitive polymer for extreme ultraviolet rays and deep ultraviolet rays comprises a repeating unit expressed by chemical formula (1) [wherein R1and R1' express each independently H, methyl or trifluoromethyl; R2expresses chemical formula (1-1)]. COPYRIGHT: (C)2008,JPO&INPIT</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjL0KwjAURrs4iPoOF3chVgtdQ3trIk1uSK7FTqVInEQLdfPl_cHRwel8cD7ONHk4RUwBbdCsGwRHdWvQQ0Ue8MgeDcKhZi8bTTUyeNmCtCWUiO6n-PQ8Bh0YCjKO3mGyr21ZaqvtDlghBGlwnkzO_WWMiy9nybJCLtQqDrcujkN_itd47_YuFSIX22ydZnLz1-kJUk88FA</recordid><startdate>20080228</startdate><enddate>20080228</enddate><creator>KIM DEOG-BAE</creator><creator>KIM JAE-HYUN</creator><scope>EVB</scope></search><sort><creationdate>20080228</creationdate><title>PHOTOSENSITIVE POLYMER FOR EXTREME ULTRAVIOLET RAY AND DEEP ULTRAVIOLET RAY AND PHOTORESIST COMPOSITION CONTAINING THE SAME</title><author>KIM DEOG-BAE ; KIM JAE-HYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008045125A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM DEOG-BAE</creatorcontrib><creatorcontrib>KIM JAE-HYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM DEOG-BAE</au><au>KIM JAE-HYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOSENSITIVE POLYMER FOR EXTREME ULTRAVIOLET RAY AND DEEP ULTRAVIOLET RAY AND PHOTORESIST COMPOSITION CONTAINING THE SAME</title><date>2008-02-28</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide a photosensitive polymer able to form fine patterns responding to extreme ultraviolet rays and deep ultraviolet rays, greatly reduce LER (line edge roughness) after development and improve safety of the line width of a formed pattern and a photoresist composition containing the same. SOLUTION: The photosensitive polymer for extreme ultraviolet rays and deep ultraviolet rays comprises a repeating unit expressed by chemical formula (1) [wherein R1and R1' express each independently H, methyl or trifluoromethyl; R2expresses chemical formula (1-1)]. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | PHOTOSENSITIVE POLYMER FOR EXTREME ULTRAVIOLET RAY AND DEEP ULTRAVIOLET RAY AND PHOTORESIST COMPOSITION CONTAINING THE SAME |
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