SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve the uniformity of the operation of a protective transistor and protect an internal circuit from an ESD surge without inviting the enlargement of the element area of the protective transistor in a semiconductor device comprising the protective transistor. SOLUTION: There is provided a semiconductor device comprising a bipolar transistor 100 formed on a semiconductor substrate. The semiconductor device comprises a plurality of current control units 107 arranged on a bipolar transistor forming region in a semiconductor substrate. Each of the plurality of current control units 107 electrically connects a base layer 102 and an emitter layer 103 which constitute the bipolar transistor 100. COPYRIGHT: (C)2008,JPO&INPIT